AlN heteroepitaxial and oriented films grown on (111), (110) and (100) natural diamond faces

CVD growth of AlN thin films on (100), (110) and (111) diamond C-alpha, substrates was observed, and RHEED and EPMP were used to provide the evidence of growth of epitaxial (01.1) [11.(3) over bar] AlN//(111) [(1) over bar 10] C-alpha or oriented wurtzitic AlN on (111) diamond. Twinning in AIN films on (111) C-alpha was found. In the case of the (111) substrate, it was shown that in starting from a 0.4 mu m film thickness, a conversion of epitaxial growth to a growth texture with a [00.1] axis normal to substrate takes place. The same textures were observed on both (100) and (110) diamond faces for 0.2-0.3 mu m and greater film thickness. For an AlN thickness of about 1 mu m, the crystallite size near outer AlN film surface was 10-20 nm. (C) 1998 Published by Elsevier Science S.A.