Low-dislocation-density GaN from a single growth on a textured substrate

被引：158

作者：

Ashby, CIH ^{[1
]}

Mitchell, CC ^{[1
]}

Han, J ^{[1
]}

Missert, NA ^{[1
]}

Provencio, PP ^{[1
]}

Follstaedt, DM ^{[1
]}

Peake, GM ^{[1
]}

Griego, L ^{[1
]}

机构：

[1] Sandia Natl Labs, Albuquerque, NM 87185 USA

来源：

APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 20期

关键词：

D O I：

10.1063/1.1325394

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The density of threading dislocations (TD) in GaN grown directly on flat sapphire substrates is typically greater than 10(9)/cm(2). The density of dislocations can be decreased by orders of magnitude using cantilever epitaxy, which employs pre-patterned sapphire substrates to provide reduced-dimension mesa regions for nucleation and etched trenches between them for suspended lateral growth of GaN or AlGaN. The substrate is pre-patterned with narrow lines and etched to a depth that permits coalescence of laterally growing III-N nucleated on the mesa surfaces before vertical growth fills the etched trench. Low-dislocation densities typical of epitaxial lateral overgrowth are obtained in the cantilever regions and the TD density is also reduced up to 1 mum from the edge of the support regions. (C) 2000 American Institute of Physics. [S0003-6951(00)02846-1].

引用

页码：3233 / 3235

页数：3

共 15 条

[1] Dislocation reduction in GaN thin films via lateral overgrowth from trenches [J].