Enlargement of SiC crystals: Defect formation at the interfaces

被引：16

作者：

Anikin, M

Pons, M

Chourou, K

Chaix, O

Bluet, JM

Lauer, V

Madar, R

机构：

[1] ENSPG, INPG, CNRS, UMR 5628,LMGP, F-38402 St Martin Dheres, France

[2] ENSEEG, UJF 5614, UMR CNRS, LTPCM,, F-38402 St Martin Dheres, France

[3] INSA Lyon, LPM, UMR 5511, F-69621 Villeurbanne, France

来源：

SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2 | 1998年 / 264-2卷

关键词：

sublimation growth; crystal enlargement; pinholes; macrodefects;

D O I：

10.4028/www.scientific.net/MSF.264-268.45

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

6H-SiC and 4H-SiC ingots 1 inch in diameter have been grown by the Modified Lely Method (MLM) with "sublimation etching" on 1 cm(2) Lely substrates and 4H-SiC substrates, respectively. The growth of 4H-SiC on (0001) Si face of MLM seeds was not stable. At high growth rate 6H-SiC growth was observed on 4H-SiC substrate. The pinhole density was less than 100 cm(-2) in the case of the 6H-SiC substrates.

引用

页码：45 / 48

页数：4