State of the art in thin film thickness and deposition rate monitoring sensors

被引：54

作者：

Buzea, C ^{[1
]}

Robbie, K

机构：

[1] Queens Univ, Dept Phys, Kingston, ON K7L 3N6, Canada

[2] Queens Univ, Ctr Mfg & Adv Ceram & Nanomat, Kingston, ON K7L 3N6, Canada

来源：

REPORTS ON PROGRESS IN PHYSICS | 2005年 / 68卷 / 02期

关键词：

D O I：

10.1088/0034-4885/68/2/R04

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

In situ monitoring parameters are indispensable for thin film fabrication. Among them, thickness and deposition rate control are often the most important in achieving the reproducibility necessary for technological exploitation of physical phenomena dependent on film microstructure. This review describes the types of thickness and deposition rate sensors and their theoretical and phenomenological background, underlining their performances, as well as advantages and disadvantages.

引用

页码：385 / 409

页数：25

共 58 条

[51]

TERADA S, 2001, SEMICOND EUROPA 2001

[52] REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION OSCILLATIONS DURING EPITAXIAL-GROWTH OF HIGH-TEMPERATURE SUPERCONDUCTING OXIDES [J].