Deep level defects in n-type GaN grown by molecular beam epitaxy

被引：115

作者：

Wang, CD ^{[1
]}

Yu, LS

Lau, SS

Yu, ET

Kim, W

Botchkarev, AE

Morkoc, H

机构：

[1] Univ Calif San Diego, Dept Elect & Comp Engn, La Jolla, CA 92093 USA

[2] Univ Illinois, Dept Mat Sci & Engn, Urbana, IL 61801 USA

[3] Virginia Commonwealth Univ, Dept Elect Engn, Richmond, VA 23284 USA

[4] Tianjin Univ, Dept Appl Phys, Tianjin 300072, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 1998年 / 72卷 / 10期

关键词：

D O I：

10.1063/1.121016

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Deep-level transient spectroscopy has been used to characterize electronic defects in n-type GaN grown by reactive molecular-beam epitaxy. Five deep-level electronic defects were observed, with activation energies E-1=0.234+/-0.006, E-2=0.578+/-0.006, E-3=0.657+/-0.031, E-4=0.961+/-0.026, and E-5=0.240+/-0.012 eV. Among these, the levels labeled E-1, E-2, and E-3 are interpreted as corresponding to deep levels previously reported in n-GaN grown by both hydride vapor-phase epitaxy and metal organic chemical vapor deposition. Levels E-4 and E-5 do not correspond to any previously reported defect levels, and are characterized for the first time in our studies. (C) 1998 American Institute of Physics. [S0003-6951(98)02910-6].

引用

页码：1211 / 1213

页数：3

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