Spin dependent tunneling junctions with reduced Neel coupling

被引:17
作者
Wang, DX [1 ]
Daughton, JM [1 ]
Qian, ZH [1 ]
Nordman, C [1 ]
Tondra, M [1 ]
Pohm, A [1 ]
机构
[1] NVE Corp, Eden Prairie, MN 55344 USA
关键词
D O I
10.1063/1.1556982
中图分类号
O59 [应用物理学];
学科分类号
摘要
A new structure of spin dependent tunneling (SDT) junctions has been demonstrated to have a much reduced Neel coupling field between the free and pinned ferromagnetic layers comparing with conventional SDT structures. The new structure consists of a modified synthetic-antiferromagnetic composite layer as the pinned layer with two Ru spacer layers and three ferromagnetic layers. The Neel coupling field is much reduced for both top- and bottom-pinned SDT structures using this new composite pinned layer. Furthermore, the net magnetic moment is kept at zero for the composite pinned layer to minimize the fringe field after patterning. The coupling reduction can be understood by considering the additive contribution from the first two interfaces with Ru in the composite pinned layer, which cancels that from the pinned layer interface with the barrier. By properly spacing these three most important interfaces, reducing the coupling to basically zero is realized. The coupling reduction allows the elimination of an on-chip bias coil used to correct the coupling, therefore simplifying the electronics and reducing the power to operate the SDT sensors. The new SDT structure has potential impacts on many SDT and spin valve devices such as magnetoresistive sensors, galvanic isolators, magnetic logic, and MRAM devices. (C) 2003 American Institute of Physics.
引用
收藏
页码:8558 / 8560
页数:3
相关论文
共 9 条
[1]   Magnetic tunneling applied to memory [J].
Daughton, JM .
JOURNAL OF APPLIED PHYSICS, 1997, 81 (08) :3758-3763
[2]   Effect of finite magnetic film thickness on Neel coupling in spin valves [J].
Kools, JCS ;
Kula, W ;
Mauri, D ;
Lin, T .
JOURNAL OF APPLIED PHYSICS, 1999, 85 (08) :4466-4468
[3]   Spin valves exchange biased by Co/Ru/Co synthetic antiferromagnets [J].
Leal, JL ;
Kryder, MH .
JOURNAL OF APPLIED PHYSICS, 1998, 83 (07) :3720-3723
[4]   LARGE MAGNETORESISTANCE AT ROOM-TEMPERATURE IN FERROMAGNETIC THIN-FILM TUNNEL-JUNCTIONS [J].
MOODERA, JS ;
KINDER, LR ;
WONG, TM ;
MESERVEY, R .
PHYSICAL REVIEW LETTERS, 1995, 74 (16) :3273-3276
[5]  
NEEL L, 1962, CR HEBD ACAD SCI, V255, P1545
[6]   Thickness effect on ferro/antiferromagnetic coupling of Co/CrMnPt systems [J].
Nishioka, K ;
Shigematsu, S ;
Imagawa, T ;
Narishige, S .
JOURNAL OF APPLIED PHYSICS, 1998, 83 (06) :3233-3238
[7]   Picotesla field sensor design using spin-dependent tunneling devices [J].
Tondra, M ;
Daughton, JM ;
Wang, DX ;
Beech, RS ;
Fink, A ;
Taylor, JA .
JOURNAL OF APPLIED PHYSICS, 1998, 83 (11) :6688-6690
[8]   Prototype spin-dependent tunneling isolators integrated with integrated circuit electronics [J].
Wang, DX ;
Tondra, M ;
Nordman, C ;
Qian, ZH ;
Daughton, JM ;
Lange, E ;
Brownell, D ;
Tran, L ;
Schuetz, J .
JOURNAL OF APPLIED PHYSICS, 2002, 91 (10) :8405-8407
[9]   Magnetostatic coupling in spin dependent tunnel junctions [J].
Wang, DX ;
Daughton, JM ;
Reed, D ;
Wang, WD ;
Wang, JQ .
IEEE TRANSACTIONS ON MAGNETICS, 2000, 36 (05) :2802-2805