Thermal Transport in Suspended and Supported Monolayer Graphene Grown by Chemical Vapor Deposition

被引：1015

作者：

Cai, Weiwei

Moore, Arden L.

Zhu, Yanwu

Li, Xuesong

Chen, Shanshan

Shi, Li ^{[1
]}

Ruoff, Rodney S.

机构：

[1] Univ Texas Austin, Dept Mech Engn, Austin, TX 78712 USA

来源：

NANO LETTERS | 2010年 / 10卷 / 05期

基金：

美国国家科学基金会;

关键词：

Thermal conductivity; thermal interface resistance; graphene; Raman; measurement; PYROLYTIC GRAPHITE; PHONON TRANSPORT; CARBON NANOTUBES; LAYER GRAPHENE; LARGE-AREA; CONDUCTIVITY; FILMS; SUPERLATTICES; GAS;

D O I：

10.1021/nl9041966

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Graphene monolayer has been grown by chemical vapor deposition on copper and then suspended over a hole. By measuring the laser heating and monitoring the Raman G peak, we obtain room-temperature thermal conductivity and interface conductance of (370 + 650/-320) W/m K and (28 + 16/-9.2) MW/m(2) K For the supported graphene. The thermal conductivity of the suspended graphene exceeds (2500 + 1100/-1050) W/m K near 350 K and becomes (1400 + 500/-480) W/m K at about 500 K.

引用

页码：1645 / 1651

页数：7

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