Evidence of a pressure-induced metallization process in monoclinic VO2

被引:179
作者
Arcangeletti, E.
Baldassarre, L.
Di Castro, D.
Lupi, S.
Malavasi, L.
Marini, C.
Perucchi, A.
Postorino, P.
机构
[1] Univ Roma La Sapienza, Coherentia CNR INFM, I-00185 Rome, Italy
[2] Univ Roma La Sapienza, Dipartimento Fis, I-00185 Rome, Italy
[3] Univ Pavia, Dipartimento Chim Fis M Rolla, INSTM, I-27100 Pavia, Italy
[4] Univ Pavia, IENI-CNR, I-27100 Pavia, Italy
关键词
D O I
10.1103/PhysRevLett.98.196406
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Raman and combined infrared transmission and reflectivity measurements were carried out at room temperature (RT) on monoclinic VO2 over the 0-19 GPa and 0-14 GPa pressure ranges. Both lattice dynamics and optical gap show a remarkable stability up to P-*similar to 10 GPa whereas subtle modifications of V ion arrangements within the monoclinic lattice, together with the onset of a metallization process via band gap filling, are observed for P > P-*. Differently from P=0, where the VO2 metallic phase is found only in conjunction with the rutile structure above 340 K, a new RT metallic phase within a monoclinic structure appears accessible in the high pressure regime.
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页数:4
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