Green's function boundary conditions in two-dimensional and three-dimensional atomistic simulations of dislocations

被引:114
作者
Rao, S [1 ]
Hernandez, C
Simmons, JP
Parthasarathy, TA
Woodward, C
机构
[1] USAF, Wright Lab, MLLM, Mat Directorate, Wright Patterson AFB, OH 45433 USA
[2] Universal Energy Syst Inc, Dayton, OH 45432 USA
[3] SW Ohio Council Higher Educ, Dayton, OH 45420 USA
来源
PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES | 1998年 / 77卷 / 01期
关键词
D O I
10.1080/01418619808214240
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A method for dynamically updating the boundary conditions of atomistic simulations is presented. The lattice Green's function boundary relaxation method, originally introduced by Sinclair et al. in 1978, is extended to treat three-dimensional (3D) simulations. The boundary conditions for two-dimensional (2D) and 3D defect cells are evaluated using line and point force distributions respectively. The method is general and has been incorporated into several potential interaction schemes. Examples of the method using embedded-atom method potentials are presented for the following: simulation of a straight (a/2)[110] screw dislocation in Ni; an isolated a(001) kink on an (a/2)[111] screw dislocation in bcc Fe; simulation of a periodic array of a(001) kinks on an (a/2)[111] screw dislocation in bcc Fe. The first simulation is 2D in nature and the last two defects are 3D.
引用
收藏
页码:231 / 256
页数:26
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