Silk polymer coating with low dielectric constant and high thermal stability for ULSI interlayer dielectric

被引：57

作者：

Townsend, PH ^{[1
]}

Martin, SJ ^{[1
]}

Godschalx, J ^{[1
]}

Romer, DR ^{[1
]}

Smith, DW ^{[1
]}

Castillo, D ^{[1
]}

DeVries, R ^{[1
]}

Buske, G ^{[1
]}

Rondan, N ^{[1
]}

Froelicher, S ^{[1
]}

Marshall, J ^{[1
]}

Shaffer, EO ^{[1
]}

Im, JH ^{[1
]}

机构：

[1] Dow Chem Co, ME Pruitt Res Ctr, Midland, MI 48674 USA

来源：

LOW-DIELECTRIC CONSTANT MATERIALS III | 1997年 / 476卷

关键词：

D O I：

10.1557/PROC-476-9

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A novel polymer has been developed for use as a thin film dielectric in the interconnect structure of high density integrated circuits. The coating is applied to the substrate as an oligomeric solution, SILK*, using conventional spin coating equipment and produces highly uniform films after curing at 400 degrees C to 450 degrees C. The oligomeric solution, with a viscosity of ca. 30 cPs, is readily handled on standard thin film coating equipment. Polymerization does not require a catalyst. There is no water evolved during the polymerization. The resulting polymer network is an aromatic hydrocarbon with an isotropic structure and contains no fluorine.

引用

页码：9 / 17

页数：9