Palladium Schottky barrier contacts to hydrothermally grown n-ZnO and shallow electron states

被引：66

作者：

Grossner, U ^{[1
]}

Gabrielsen, S ^{[1
]}

Borseth, TM ^{[1
]}

Grillenberger, J ^{[1
]}

Kuznetsov, AY ^{[1
]}

Svensson, BG ^{[1
]}

机构：

[1] Univ Oslo, Dept Phys, N-0316 Oslo, Norway

来源：

APPLIED PHYSICS LETTERS | 2004年 / 85卷 / 12期

关键词：

D O I：

10.1063/1.1790592

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Schottky barrier contacts have been formed by electron beam evaporation of Pd on the (000 (1) over bar)-face of hydrothermally grown n-type single-crystalline ZnO. The contacts can be operated under reverse bias voltages up to -5 V and in the temperature range between 130 and 350 K. A barrier height of 0.83 eV is deducted at room temperature, which is in reasonable agreement with the value predicted by fundamental theory. The ideality factor for the current-voltage characteristics varies between 1.01 and 1.03 in the voltage range of -5.0 to +0.5 V, indicating that thermionic emission is a dominant mechanism for charge-carrier transport. Thermal admittance measurements were performed between 15 and 350 K, and two prominent levels were resolved at 0.05(1) and 0.33(2) eV below the conduction band edge, respectively. The origin of these levels is not known, but possible candidates are complexes involving hydrogen, Zn interstitials, and vacancy-oxygen centers. (C) 2004 American Institute of Physics.

引用

页码：2259 / 2261

页数：3

共 21 条

[1] Electrical characterization of vapor-phase-grown single-crystal ZnO [J].