Effects of channel quantization and temperature on off-state and on-state breakdown in composite channel and conventional InP-based HEMT's

被引：22

作者：

Meneghesso, G

Mion, A

Neviani, A

Matloubian, M

Brown, J

Hafizi, M

Liu, T

Canali, C

Pavesi, M

Manfredi, M

Zanoni, E

机构：

来源：

IEDM - INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST 1996 | 1996年

关键词：

D O I：

10.1109/IEDM.1996.553118

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

On- and off- state breakdown effects in composite channel and conventional InP-based HEMT's are studied by means of electrical measurements, and electroluminescence spectroscopy. We demonstrate that channel quantization increases off-state and on-state breakdown voltage. The temperature coefficient of the electron impact ionization rate in In0.53Ga0.47As has been studied. Differently from what happens in GaAs-based devices, carrier multiplication increases on increasing the temperature.

引用

页码：43 / 46

页数：4