Solution-liquid-solid growth of soluble GaAs nanowires

被引：135

作者：

Yu, H ^{[1
]}

Buhro, WE ^{[1
]}

机构：

[1] Washington Univ, Dept Chem, St Louis, MO 63130 USA

来源：

ADVANCED MATERIALS | 2003年 / 15卷 / 05期

关键词：

D O I：

10.1002/adma.200390096

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

GaAs nanowires exhibiting narrow diameter distributions and small diameters within and near the strong-confinement regime can be generated using the solution-liquid-solid (SLS) mechanism (see Figure for 5.99 nm diameter wires). A relationship between the mean diameters of the nanowires and the indium catalyst nanoparticles from which the nanowires are grown is furthermore established.

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页码：416 / +

页数：5

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