Bi2Te3 thin films grown by MOCVD process

被引：4

作者：

Boulouz, A ^{[1
]}

Giani, A ^{[1
]}

Pascal-Delannoy, F ^{[1
]}

Foucaran, A ^{[1
]}

Boyer, A ^{[1
]}

机构：

[1] Univ Montpellier 2, Ctr Electron & Microoptoelect Montpellier, UMR CNRS 5507, F-34095 Montpellier 05, France

来源：

PROCEEDINGS ICT'97 - XVI INTERNATIONAL CONFERENCE ON THERMOELECTRICS | 1997年

关键词：

D O I：

10.1109/ICT.1997.667059

中图分类号：

O414.1 [热力学];

学科分类号：

摘要：

The growth of Bi2Te3 thin films by metal organic chemical vapor deposition (MOCVD) using diethytellurium and trimethylbismuth as tellurium and bismuth sources respectively is investigated on pyrex substrate. The results of growth rate, morphology, electrical and thermoelectrical properties as a function of growth parameters are given. The prepared films were always n-type. Film properties, such as electrical resistivity, mobility, carrier concentration, thermoelectric power and X-ray diffraction were studied at 300 K. Increasing VI/V ratio was found to reduce the electrical resistivity to 12 mu Omega.m. Hall mobility varies from 28 and 150cm(2)/V.s. The figure-of-merit obtained was Z = 2.48 x10(-3) K-1. These initial results suggest a significant potential of MOCVD growth for large scale production of thermoelectric material.

引用

页码：167 / 170

页数：4