Comparison between Al- and B-doped ZnO window layers for CuInSe2 thin film solar cells

被引：15

作者：

Nakada, T

Murakami, N

Kunioka, A

机构：

来源：

THIN FILMS FOR PHOTOVOLTAIC AND RELATED DEVICE APPLICATIONS | 1996年 / 426卷

关键词：

D O I：

10.1557/PROC-426-411

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A comparative study of several properties of ZnO:Al and ZnO:B films grown by magnetron sputtering has been performed. The influence of these window layers on device performance has also been investigated. Sputter-deposited ZnO:B films were used for the first time as a window material of CIS thin film solar cells. The short circuit current was improved by replacing ZnO:Al with ZnO:B window layers. A discussion of the issues relating to ZnO window layers for improving cell performance is presented.

引用

页码：411 / 418

页数：8