Microstructural modification in Co/Cu giant-magnetoresistance multilayers

被引:22
作者
Christides, C [1 ]
Stavroyiannis, S [1 ]
Boukos, N [1 ]
Travlos, A [1 ]
Niarchos, D [1 ]
机构
[1] NCSR Demokritos, Inst Mat Sci, Athens 15310, Greece
基金
美国国家科学基金会;
关键词
D O I
10.1063/1.366598
中图分类号
O59 [应用物理学];
学科分类号
摘要
Three different classes of [Co/1.1 nm/Cu/2.1 nm](30) multilayers were grown by magnetron sputtering deposition. The effect of magnetostatic interactions on the giant-magnetoresistance (GMR) and magnetic properties are examined in relation to the induced changes in the film microstructure as it is varied by: (i) the substrate surface roughness and (ii) the effect of thermal isolation of the Si(100) substrate from the cooling plate during deposition. A remarkable variation in shape and magnitude of GMR, and in the magnetic (M-H) loops, is observed for the three classes of films. It is found that there are three characteristic features in every sample that vary systematically: (i) The (Delta R/R)(max) ratio. (ii) The magnetic field range where a GMR loop reaches its minimum value. (iii) The (M-H) loops that vary from the characteristic antiferromagnetic to a typical ferromagnetic loop shape. Two well-separated grain size distributions below and above 12 nm were found from transmission electron microscopy. The smaller grains are associated with the appearance of a considerable fraction of ferromagnetically coupled regions in the multilayer. (C) 1998 American Institute of Physics. [S0021-8979(98)04107-3].
引用
收藏
页码:3724 / 3730
页数:7
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