Fabrication of subwavelength-size aperture for a near-field optical probe using various microfabrication procedures

被引:9
作者
Choi, SS [1 ]
Jung, MY
Kim, DW
Kim, JW
Boo, JH
机构
[1] Sun Moon Univ, Coll Nat Sci, Dept Phys, Asan 336708, Chungnam, South Korea
[2] Sungkyunkwan Univ, Dept Nanosci & Technol, Suwon, Kyung Gi Do, South Korea
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2003年 / 21卷 / 01期
关键词
D O I
10.1116/1.1534574
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We successfully fabricated subwavelength-size silicon oxide apertures on a cantilever array as a near-field optical probe. Various semiconductor processes were utilized for subwavelength-size aperture fabrication. The anisotropic etching of the Si substrate by alkaline solutions followed by anisotropic crystal orientation dependent oxidation, anisotropic plasma etching, and isotropic oxide etching. was carried out. 2, 3, and 4 mum size dot arrays were initially photolithographically patterned on a Si(100) wafer. After fabrication of a V-groove shape by anisotropic etching, oxide growth at 1000 degreesC was performed to have an oxide etch mask. The oxide layer on the Si(111) plane has been utilized as an etch mask for plasma dry etching and water-diluted HF wet etching for subwavelength-size aperture fabrication. A Au thin layer was deposited on the fabricated oxide aperture on the cantilever array. After this procedure, the initial opening, 300 nm of the oxide aperture was reduced down to similar to95 nm. (C) 2003 American Vacuum Society.
引用
收藏
页码:118 / 122
页数:5
相关论文
共 17 条
[1]   NEAR-FIELD MAGNETOOPTICS AND HIGH-DENSITY DATA-STORAGE [J].
BETZIG, E ;
TRAUTMAN, JK ;
WOLFE, R ;
GYORGY, EM ;
FINN, PL ;
KRYDER, MH ;
CHANG, CH .
APPLIED PHYSICS LETTERS, 1992, 61 (02) :142-144
[2]   MICROMACHINED SUBMICROMETER PHOTODIODE FOR SCANNING PROBE MICROSCOPY [J].
DAVIS, RC ;
WILLIAMS, CC ;
NEUZIL, P .
APPLIED PHYSICS LETTERS, 1995, 66 (18) :2309-2311
[3]   Fabrication of a nanosize metal aperture for a near field scanning optical microscopy sensor using photoresist removal and sputtering techniques [J].
Jung, MY ;
Lyo, IW ;
Kim, DW ;
Choi, SS .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 2000, 18 (04) :1333-1337
[4]  
JUNG MY, 2000, P EUR SURF SCI M MAD
[5]  
KAO DB, 1987, IEEE T ELECTRON DEV, V34, P1008
[6]   TWO-DIMENSIONAL THERMAL-OXIDATION OF SILICON .2. MODELING STRESS EFFECTS IN WET OXIDES [J].
KAO, DB ;
MCVITTIE, JP ;
NIX, WD ;
SARASWAT, KC .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (01) :25-37
[7]   Bulk micromachining of silicon [J].
Kovacs, GTA ;
Maluf, NI ;
Petersen, KE .
PROCEEDINGS OF THE IEEE, 1998, 86 (08) :1536-1551
[8]   SELF-LIMITING OXIDATION FOR FABRICATING SUB-5 NM SILICON NANOWIRES [J].
LIU, HI ;
BIEGELSEN, DK ;
PONCE, FA ;
JOHNSON, NM ;
PEASE, RFW .
APPLIED PHYSICS LETTERS, 1994, 64 (11) :1383-1385
[9]   High-density data storage using proximal probe techniques [J].
Mamin, HJ ;
Terris, BD ;
Fan, LS ;
Hoen, S ;
Barrett, RC ;
Rugar, D .
IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1995, 39 (06) :681-699
[10]   Optical data storage read out at 256 Gbits/in(2) [J].
Martin, Y ;
Rishton, S ;
Wickramasinghe, HK .
APPLIED PHYSICS LETTERS, 1997, 71 (01) :1-3