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Ferromagnetism in transition-metal-doped TiO2 thin films -: art. no. 195204

被引：197
作者：
Hong, NH
Sakai, J
Prellier, W
Hassini, A
Ruyter, A
Gervais, F
机构：
[1] Univ F Rabelais, Lab LEMA, UMR 6157, CNRS,CEA, F-37200 Tours, France
[2] JAIST, Sch Mat Sci, Tatsunokuchi, Ishikawa 9231292, Japan
[3] ENSICAEN, Lab CRISMAT, UMR 6508, CNRS, F-14050 Caen, France
来源：
PHYSICAL REVIEW B | 2004年 / 70卷 / 19期
关键词：
D O I：
10.1103/PhysRevB.70.195204
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
V, Cr, Fe, Co, and Ni had been chosen to substitute partially for Ti in TiO2. By applying appropriate conditions, transition-metal-doped TiO2 thin films deposited on LaAlO3 substrates by laser ablation which show a good crystallinity and ferromagnetism above room temperature, could be obtained. The tendency of the dependence of magnetization versus element seems to be in accord with what theories have predicted. Among all the dopants, V appears to be the most promising candidate since its doping results in semiconducting films with a giant magnetic moment. Films are free of dopant particles or clusters. Structural and magnetic measurements have revealed that the room temperature ferromagnetism in V/Cr/Fe/Co/Ni-doped thin films must originate from the transition-metal-doped TiO2 matrices.
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页码：1 / 6
页数：6
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