Single crystal growth of the high pressure phase of (VO)2P2O7 at 3 GPa

被引:37
作者
Saito, T [1 ]
Terashima, T
Azuma, M
Takano, M
Goto, T
Ohta, H
Utsumi, W
Bordet, P
Johnston, DC
机构
[1] Kyoto Univ, Inst Chem Res, Uji, Kyoto 6110011, Japan
[2] Japan Sci & Technol Corp, CREST, Kawaguchi, Saitama 3320012, Japan
[3] Kobe Univ, Fac Sci, Dept Phys, Nada Ku, Kobe, Hyogo 6578501, Japan
[4] Kobe Univ, Venture Business Lab, Nada Ku, Kobe, Hyogo 6578501, Japan
[5] Japan Atom Energy Res Inst, Dept Synchrotron Radiat Res, Sayo, Hyougo 6795148, Japan
[6] CNRS, Cristallog Lab, F-38042 Grenoble 9, France
[7] Iowa State Univ Sci & Technol, Ames Lab, Ames, IA 50011 USA
[8] Iowa State Univ Sci & Technol, Dept Phys & Astron, Ames, IA 50011 USA
关键词
high-pressure synthesis; single crystal; synchrotron XRD; ESR; magnetic susceptibility; S=1/2 Heisenberg AF alternating-exchange chain;
D O I
10.1006/jssc.2000.8761
中图分类号
O61 [无机化学];
学科分类号
070301 ; 081704 ;
摘要
Single crystals of the high-pressure phase of (VO)(2)P2O7 were grown by slowly cooling the melt at 3 GPa, Relevant reactions at high pressure and high temperature were studied in advance by in situ X-ray diffraction (XRD) measurements, The crystal structure of the high-pressure phase was determined by single-crystal XRD, Magnetic susceptibility of the crystal was measured along the three principal axes and analyzed using a S = 1/2 Heisenberg AF alternating-exchange chain model, A good fit was obtained using the g values determined by ESR measurements, J(1)/k(B) = 131.6(1) K, and an alternation parameter of alpha = J(2)/J(1) = 0.8709(5). The spin gap was estimated to be Delta/k(B) = 33.4(2) K. (C) 2000 Academic Press.
引用
收藏
页码:124 / 131
页数:8
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