Co-sputtered Cd2SnO4 films as front contacts for CdTe solar cells

被引:9
作者
Mamazza, R [1 ]
Yu, S [1 ]
Morel, DL [1 ]
Ferekides, CS [1 ]
机构
[1] Univ S Florida, Ctr Clean Energy & Vehicles, Dept Elect Engn, Tampa, FL 33620 USA
来源
CONFERENCE RECORD OF THE TWENTY-NINTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE 2002 | 2002年
关键词
D O I
10.1109/PVSC.2002.1190639
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
Cd2SnO4 thin films were investigated from a materials point of view as well as from an application. point of view through their incorporation into CdTe based solar cells. Cd2SnO4 was deposited by co-sputtering from CdO and SnO2 targets. The lowest resistivity achieved was 2.01 X 10(-4) Omega-cm with. a mobility of 29.2 cm(2)/V/s and a carrier concentration of 8.47 X 10(20) cm(-3).. For this same sample the average transmission was. over 90% over the visible and near IR spectrum (400-900nm). When Cd2SnO4 were used as part of the front contact in thin film CdTe solar cells V-OC's over 840 mV, J(SC)'s over 23 mA/cm(2), and ff's over 68.0% were obtained with the best to-date efficiency being 14.0%.
引用
收藏
页码:612 / 615
页数:4
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