InGaAsSb-AlGaAsSb distributed-feedback lasers emitting at 1.72 μm

被引：10

作者：

Werner, R ^{[1
]}

Bleuel, T ^{[1
]}

Hofmann, J ^{[1
]}

Brockhaus, M ^{[1
]}

Forchel, A ^{[1
]}

机构：

[1] Univ Wurzburg, D-97074 Wurzburg, Germany

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2000年 / 12卷 / 08期

关键词：

DFB-laser; GaSb;

D O I：

10.1109/68.867976

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have developed distributed-feedback ridge waveguide lasers based on AlGa(In)AsSb emitting at 1.72 mu m. The distributed feedback is obtained by first-order Cr-Bragg gratings defined on both sides of the laser ridge. The threshold current under pulsed operation at room temperature was around 180 mA and an output power of 1.5 mW was obtained. The gratings lead to a side-mode suppression ratio of 27 dB.

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收藏

页码：966 / 968

页数：3

相关论文

共 9 条

[1] GaInSb/AlGaAsSb strained quantum well semiconductor lasers for 1.55 μm operation [J].

Almuneau, G ;

Genty, F ;

Wilk, A ;

Grech, P ;

Joullié, A ;

Chusseau, L .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1999, 14 (01) :89-92

[2] HIGH-POWER MULTIPLE-QUANTUM-WELL GAINASSB/ALGAASSB DIODE-LASERS EMITTING AT 2.1 MU-M WITH LOW THRESHOLD CURRENT-DENSITY [J].

CHOI, HK ;

EGLASH, SJ .

APPLIED PHYSICS LETTERS, 1992, 61 (10) :1154-1156

[3] Diode laser absorption measurements of CH3Cl and CH4 near 1.65 mu m [J].

Chou, SI ;

Baer, DS ;

Hanson, RK .

APPLIED OPTICS, 1997, 36 (15) :3288-3293

[4] COUPLED-WAVE THEORY OF DISTRIBUTED FEEDBACK LASERS [J].

KOGELNIK, H ;

SHANK, CV .

JOURNAL OF APPLIED PHYSICS, 1972, 43 (05) :2327-+

[5] ROOM-TEMPERATURE 2.78 MU-M ALGAASSB/INGAASSB QUANTUM-WELL LASERS [J].

LEE, H ;

YORK, PK ;

MENNA, RJ ;

MARTINELLI, RU ;

GARBUZOV, DZ ;

NARAYAN, SY ;

CONNOLLY, JC .

APPLIED PHYSICS LETTERS, 1995, 66 (15) :1942-1944

[6] Ultralow-threshold (50 A/cm2) strained single-quantum-well GaInAsSb/AlGeAsSb lasers emitting at 2.05 μm [J].

Turner, GW ;

Choi, HK ;

Manfra, MJ .

APPLIED PHYSICS LETTERS, 1998, 72 (08) :876-878

[7] Hydrogen chloride gas monitoring at 1.74 μm with InGaAs/InGaAsP strained quantum well laser [J].

Ubukata, A ;

Dong, J ;

Masusaki, H ;

Satoh, T ;

Matsumoto, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1998, 37 (5A) :2521-2523

[8] Lattice-matched GaSb/AlGaAsSb double-heterostructure diode lasers grown by MOVPE [J].

Wang, CA ;

Choi, HK .

ELECTRONICS LETTERS, 1996, 32 (19) :1779-1781

[9]

WERLE P, 1998, SPECTROCHIM ACTA A, V54, P222