Dissolution and growth of silicon carbide crystals in melt-solutions

Dissolution and growth of bulk; SiC crystals in molten transition metals and their silicon-rich alloys were studied, Bulk plate-like: SiC crystals up to 7 mm in lateral size and 0.2 mm in thickness have been successfully grown without seed from the selected molten alloy with a lateral growth rate of the order of 1 mm/hr. Normal growth rate was significantly less than lateral one. Optical and electron microscopical observations revealed that the crystals are free of micropipes. X-ray diffraction showed an alteration of polytypes from 6H for crystals spontaneously grown on the melt surface to 6H+15R or 21R for crystals grown in the melt volume, and 3C or 3C+6H for crystals formed on the bottom of the graphite crucible. Auger electron spectroscopy and secondary ion mass spectrometry did not detect any traces of melt components in the crystals (within the accuracy of 0.01 at.%), Photoluminescence of the grown crystals was measured.