Growth and characterization of TiO2 as a barrier for spin-polarized tunneling

被引：37

作者：

Bibes, M

Bowen, M

Barthélémy, A

Anane, A

Bouzehouane, K

Carrétéro, C

Jacquet, E

Contour, JP

Durand, O

机构：

[1] Unite Mixte Phys CNRS THALES, F-91404 Orsay, France

[2] Thales Res & Technol France, F-91404 Orsay, France

来源：

APPLIED PHYSICS LETTERS | 2003年 / 82卷 / 19期

关键词：

D O I：

10.1063/1.1568159

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the elaboration and characterization of tunnel junctions based on La2/3Sr1/3MnO3 and TiO2. The structural analysis shows that TiO2 grows epitaxially in the anatase phase and forms flat interfaces with the adjacent layers. Resistance maps of a La2/3Sr1/3MnO3/TiO2 bilayer reveal a homogeneous resistance level. After patterning tunnel junctions, we obtain a large positive tunneling magnetoresistance (TMR) at low temperature for La2/3Sr1/3MnO3/TiO2/La2/3Sr1/3MnO3 junctions and a negative TMR in the case of La2/3Sr1/3MnO3/TiO2/Co. This negative TMR reflects a negative spin polarization of Co at the interface with TiO2, in analogy with recent experimental results for the Co/SrTiO3 interface. (C) 2003 American Institute of Physics.

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页码：3269 / 3271

页数：3

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