Organic field-effect bipolar transistors

被引:132
作者
Dodabalapur, A
Katz, HE
Torsi, L
Haddon, RC
机构
[1] AT and T Bell Laboratories, Murray Hill
关键词
D O I
10.1063/1.115728
中图分类号
O59 [应用物理学];
学科分类号
摘要
Organic field-effect transistors (FETs) which employ two carefully selected active materials can function as n channel, p channel, or both n- and p-channel devices. It is shown that under an appropriate set of bias conditions the channel current in FETs with alpha-hexathienylene (alpha-6T) and C-60 active layers consist of electron and hole components that are injected from the source and drain contacts into the C-60 and alpha-6T layers, respectively. (C) 1996 American Institute of Physics.
引用
收藏
页码:1108 / 1110
页数:3
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