Mass absorption coefficient of tungsten and tantalum, 1450 eV to 2350 eV: Experiment, theory, and application

被引:7
作者
Levine, ZH [1 ]
Grantham, S
Tarrio, C
Paterson, DJ
McNulty, I
Levin, TM
Ankudinov, AL
Rehr, JJ
机构
[1] Natl Inst Stand & Technol, Phys Lab, Div Electron & Opt Phys, Gaithersburg, MD 20899 USA
[2] Argonne Natl Lab, Adv Photon Source, Expt Facil Div, Xray Microscopy Grp, Argonne, IL 60439 USA
[3] IBM Corp, Microelect Div, Analyt Serv Grp, Essex Jct, VT 05452 USA
[4] Univ Washington, Dept Phys, Seattle, WA 98195 USA
来源
JOURNAL OF RESEARCH OF THE NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY | 2003年 / 108卷 / 01期
关键词
integrated circuit interconnect; M-3; edge; M-4; M-5; mass absorption; microspectroscopy; tantalum; transmission; tungsten;
D O I
10.6028/jres.108.002
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
The mass absorption coefficients of tungsten and tantalum were measured with soft x-ray photons from 1450 eV to 2350 eV using an undulator source. This region includes the M-3, M-4, and M-5 absorption edges. X-ray absorption fine structure was calculated within a real-space multiple scattering formalism; the predicted structure was observed for tungsten and to a lesser degree tantalum as well. Separately, the effects of dynamic screening were observed as shown by an atomic calculation within the relativistic time-dependent local-density approximation. Dynamic screening effects influence the spectra at the 25 % level and are observed for both tungsten and tantalum. We applied these results to characterize spatially-resolved spectra of a tungsten integrated circuit interconnect obtained using a scanning transmission x-ray microscope. The results indicate tungsten fiducial markers were deposited into silica trenches with a depths of 50 % and 60 % of the markers' heights.
引用
收藏
页码:1 / 10
页数:10
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