Nanoscale effects in focused ion beam processing

被引:134
作者
Frey, L
Lehrer, C
Ryssel, H
机构
[1] Fraunhofer Inst Integrated Circuits, Dev Technol Div, D-91085 Erlangen, Germany
[2] Univ Erlangen Nurnberg, Chair Electron Devices, D-91085 Erlangen, Germany
来源
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2003年 / 76卷 / 07期
关键词
D O I
10.1007/s00339-002-1943-1
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Focused ion beams with diameters of 8 to 50 nm are used for material processing in the nanoscale regime. In this paper, effects of the ion beam-solid interaction determining the formation of small structures by ion-beam sputtering and chemically assisted material deposition and etching are investigated. In the case of decreasing feature size, angle-dependent sputtering, a non-constant sputter rate, and scattered ions play an important role. The impact on side-wall angle, aspect ratio, and shape of the bottom of the etched structures is discussed. In beam tail regions, these effects will be especially pronounced, leading to material swelling instead of material removal. Ion beam assisted etching and deposition will face additional effects. For small structures, gas depletion becomes a significant drawback. The impact on gas depletion and the competition with sputtering are discussed.
引用
收藏
页码:1017 / 1023
页数:7
相关论文
共 38 条
[1]  
Abramo M., 1997, Semiconductor International, V20, P133
[2]  
BAKER JR, 1995, P 21 INT S TEST FAIL, P43
[4]   A MONTE-CARLO COMPUTER-PROGRAM FOR THE TRANSPORT OF ENERGETIC IONS IN AMORPHOUS TARGETS [J].
BIERSACK, JP ;
HAGGMARK, LG .
NUCLEAR INSTRUMENTS & METHODS, 1980, 174 (1-2) :257-269
[5]  
Bohm C, 1996, IEEE MTT-S, P1529, DOI 10.1109/MWSYM.1996.512227
[6]  
CUMMINGS KD, 1986, SPIE, V632, P93
[7]   Modeling of focused ion beam induced surface chemistry [J].
Edinger, K ;
Kraus, T .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2000, 18 (06) :3190-3193
[8]   Modeling of focused ion beam induced chemistry and comparison with experimental data [J].
Edinger, K ;
Kraus, T .
MICROELECTRONIC ENGINEERING, 2001, 57-8 :263-268
[9]  
*FEI CO, 1996, FIB WORKST US GUID
[10]   Influence of the redeposition effect for focused ion beam 3D micromachining in silicon [J].
Fu, YQ ;
Bryan, NKA ;
Shing, ON ;
Hung, NP .
INTERNATIONAL JOURNAL OF ADVANCED MANUFACTURING TECHNOLOGY, 2000, 16 (12) :877-880