Low loss high dielectric permittivity of polyvinylidene fluoride and KxTiyNi1-x-yO (x=0.05, y=0.02) composites
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Bhadra, Debabrata
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Indian Assoc Cultivat Sci, Dept Solid State Phys, Kolkata 700032, W Bengal, IndiaIndian Assoc Cultivat Sci, Dept Solid State Phys, Kolkata 700032, W Bengal, India
Bhadra, Debabrata
[1
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Biswas, A.
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Indian Assoc Cultivat Sci, Dept Solid State Phys, Kolkata 700032, W Bengal, IndiaIndian Assoc Cultivat Sci, Dept Solid State Phys, Kolkata 700032, W Bengal, India
Biswas, A.
[1
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Sarkar, S.
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Indian Assoc Cultivat Sci, Dept Solid State Phys, Kolkata 700032, W Bengal, IndiaIndian Assoc Cultivat Sci, Dept Solid State Phys, Kolkata 700032, W Bengal, India
Sarkar, S.
[1
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Chaudhuri, B. K.
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Indian Assoc Cultivat Sci, Dept Solid State Phys, Kolkata 700032, W Bengal, IndiaIndian Assoc Cultivat Sci, Dept Solid State Phys, Kolkata 700032, W Bengal, India
Chaudhuri, B. K.
[1
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Tseng, K. F.
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Natl Sun Yat Sen Univ, Dept Phys, Kaohsiung 804, TaiwanIndian Assoc Cultivat Sci, Dept Solid State Phys, Kolkata 700032, W Bengal, India
Tseng, K. F.
[2
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Yang, H. D.
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Natl Sun Yat Sen Univ, Dept Phys, Kaohsiung 804, TaiwanIndian Assoc Cultivat Sci, Dept Solid State Phys, Kolkata 700032, W Bengal, India
Yang, H. D.
[2
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机构:
[1] Indian Assoc Cultivat Sci, Dept Solid State Phys, Kolkata 700032, W Bengal, India
[2] Natl Sun Yat Sen Univ, Dept Phys, Kaohsiung 804, Taiwan
Homogeneous thick film (similar to 0.10 mm) of high dielectric K0.05Ti0.02Ni0.93O; abbreviated as KTNO/polyvinylidene fluoride (PVDF) composite has been prepared by hot-molding technique. The frequency and temperature dependent dielectric behavior of this composite has been studied by varying the KTNO volume fraction (f(KTNO)). Near the percolation threshold (f(KTNO)=0.40), a large enhancement of effective dielectric permittivity (epsilon(eff)similar to 400 which is 40 times higher than that of pure PVDF) with low loss (similar to 0.20 at 1 kHz) is observed. The experimental epsilon(eff) data have been fitted with different theoretical models and found to follow percolation theory successfully. Such a high epsilon(eff) and low loss flexible dielectric material appears to be suitable for technological applications. (c) 2010 American Institute of Physics. [doi:10.1063/1.3437633]