Spin diffusion at finite electric and magnetic fields

被引：57

作者：

Qi, Y ^{[1
]}

Zhang, S ^{[1
]}

机构：

[1] Univ Missouri, Dept Phys & Astron, Columbia, MO 65211 USA

来源：

PHYSICAL REVIEW B | 2003年 / 67卷 / 05期

关键词：

D O I：

10.1103/PhysRevB.67.052407

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Spin-transport properties at finite electric and magnetic fields are studied by using the generalized semiclassical Boltzmann equation. It is found that the spin-diffusion equation for nonequilibrium spin density and spin currents involves a number of length scales that explicitly depend on the electric and magnetic fields. The set of macroscopic equations can be used to address a broad range of the spin-transport problems in magnetic multilayers as well as in semiconductor heterostructure. A specific example of spin injection into semiconductors at arbitrary electric and magnetic fields is illustrated.

引用

页数：4

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