Sulfur-assisted synthesis of nitride nanocrystals

被引：19

作者：

Yang, Lishan ^{[1
,2
]}

Yu, Hongxiao ^{[3
]}

Xu, Liqiang ^{[1
,2
]}

Ma, Qiang ^{[1
,2
,3
]}

Qian, Yitai ^{[1
,2
]}

机构：

[1] Shandong Univ, Minist Educ, Key Lab Colloid & Interface Chem, Jinan 250100, Peoples R China

[2] Shandong Univ, Sch Chem & Chem Engn, Jinan 250100, Peoples R China

[3] China Tobacco Shandong Ind Corp, Jinan 250100, Peoples R China

来源：

DALTON TRANSACTIONS | 2010年 / 39卷 / 11期

关键词：

CHEMICAL-VAPOR-DEPOSITION; ONE-DIMENSIONAL NANOSTRUCTURES; LOW-TEMPERATURE SYNTHESIS; TITANIUM NITRIDE; BORON-NITRIDE; ALUMINUM NITRIDE; SILICON-NITRIDE; CARBOTHERMAL REDUCTION; SHAPE EVOLUTION; METAL NITRIDES;

D O I：

10.1039/b920429f

中图分类号：

O61 [无机化学];

学科分类号：

070301 ; 081704 ;

摘要：

A series of nitrides (TiN, ZrN, BN, AlN) were prepared by using the corresponding elements (Ti, Zr, B, Al), NaN3 and sulfur as starting materials in a stainless steel autoclave at 250 degrees C. Sulfur was used to facilitate the exothermic reaction between NaN3 and sulfur (at 250 degrees C) and the final formation of nitrides. The treatment temperature affected the growth of the nitride crystals, for example, diversified morphologies of TiN nanocrystals were formed in different temperature ranges: grain and truncated octahedron (250 degrees C), octahedron (>300 degrees C), and dendrite (>400 degrees C). Through similar processes, other nitrides (for example, TiN, AlN, Si3N4) could also be produced by employing NaNH2 and additives (such as iodine or N-aminothiourea instead of sulfur) in low temperatures.

引用

页码：2855 / 2860

页数：6

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