CVD growth and characterisation of SiC epitaxial layers on faces perpendicular to the (0001) basal plane

We have grown epitaxial layers on 4H- and 6H-SiC (11 (2) over bar 0) and (10 (1) over bar 0) substrates with quality comparable to epitaxial layers grown on (0001) substrates. Capacitance-voltage measurements showed no difference ill residual carrier concentrations between the growth directions. Low temperature photoluminescence spectra showed sharp well resolved lines related to nitrogen bound excitons and free excitons indicating high quality and low doped material. X-ray diffraction analysis showed the presence of a misfit attributed to the doping difference between the epitaxial layer and the substrate, and replication of low-angle misoriented domains.