Nanosynthesis of Si-Ge-Sn semiconductors and devices via purpose-built hydride compounds

被引：6

作者：

Kouvetakis, J. ^{[1
]}

Tolle, J. ^{[1
]}

Roucka, R. ^{[1
]}

D'Costa, V. R. ^{[2
]}

Fang, Y. -Y. ^{[1
]}

Chizmeshya, A. V. G. ^{[1
]}

Menendez, J. ^{[2
]}

机构：

[1] Arizona State Univ, Dept Chem, Tempe, AZ 85287 USA

[2] Arizona State Univ, Dept Phys, Tempe, AZ 85287 USA

来源：

SIGE, GE, AND RELATED COMPOUNDS 3: MATERIALS, PROCESSING, AND DEVICES | 2008年 / 16卷 / 10期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1149/1.2986840

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

We describe new routes to the growth of Ge and Sn-containing semiconductors on Si(100). For modest Sn concentrations wGeSn alloys are expected to be direct-gap materials and this property call be exploited to develop band-to-band devices. The ternary GeSiSn system eliminates one of the major limitations of SiGe/Si by decoupling strain and bandgap. This may lead to new families of devices including quantum cascade lasers and high-efficiency solar cells based oil hybrid group IV/III-V designs. file latest advances in low-temperature CVD of SiGe/Si, Ge/Si, GeSn/Si, GeSiSn/GeSn/Si and GeSiSn/Ge/Si materials are described and key developments leading to practical device fabrication are emphasized. This includes selective growth via novel epitaxy and practical doping protocols via designer molecular sources to achieve carrier concentrations n, p > 10(19) cm-(3) for which alloy scattering to the electron and hole mobilities is very small. As an example of a GeSn/GeSiSn prototype device the fabrication of a simple photoconductor at 1.55 mu m is presented.

引用

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页码：807 / +

页数：2

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