A novel vertical current limiter fabricated with a deep trench forming technology for highly reliable field emitter arrays

被引：20

作者：

Takemura, H ^{[1
]}

Tomihari, Y ^{[1
]}

Furutake, N ^{[1
]}

Matsuno, F ^{[1
]}

Yoshiki, M ^{[1
]}

Takada, N ^{[1
]}

Okamoto, A ^{[1
]}

Miyano, S ^{[1
]}

机构：

[1] NEC Corp Ltd, Kanagawa 22911, Japan

来源：

INTERNATIONAL ELECTRON DEVICES MEETING - 1997, TECHNICAL DIGEST | 1997年

关键词：

D O I：

10.1109/IEDM.1997.650481

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have developed highly reliable field emitter arrays with a novel vertical current limiter fabricated with a deep trench forming technology. The vertical current limiter has a local current-control function that automatically prevents fatal are failure, and it has low resistance when used in the normal operation of a field emitter array. It has demonstrated a breakdown voltage as high as 120V and a negligible increase inoperation voltage, i.e., Vg of 70V at 1 mu A/tip with an emitter-cone density of more than 5x10(7) emitters/cm(2).

引用

页码：709 / 712

页数：4