Platelets and needles: Two habits of pressure-grown GaN crystals

被引：5

作者：

Bockowski, M. ^{[1
]}

Grzegory, I. ^{[1
]}

Kamler, G. ^{[1
]}

Lucznik, B. ^{[1
]}

Krukowski, S. ^{[1
]}

Wroblewski, M. ^{[1
]}

Kwiatkowski, P. ^{[1
]}

Jasik, K. ^{[1
]}

Porowski, S. ^{[1
]}

机构：

[1] Inst High Pressure Phys PAS, PL-01142 Warsaw, Poland

来源：

JOURNAL OF CRYSTAL GROWTH | 2007年 / 305卷 / 02期

关键词：

high-pressure growth from solution; gallium nitride;

D O I：

10.1016/j.jcrysgro.2007.03.027

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The growth of GaN needles by high-pressure solution method is described in detail and compared to well-known platelets' crystallization. The habit, morphology and crystal quality of the needles are examined. The growth mechanism and main factors determining the crystal habit in high-pressure solution method are discussed. The needles' preparation to be the seeds for HVPE growth is presented. (c) 2007 Elsevier B.V. All rights reserved.

引用

页码：414 / 420

页数：7

共 7 条

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Bockowski, M. ;

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Kamler, G. ;

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Porowski, S. .

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[4]

Grzegory I, 2005, WILEY SER MATER ELEC, P173

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Kamler, G ;

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[6]

LESZCZYNSKI M, 1999, PROPERTIES PROCESSIN, P6

[7]

Porowski S., 2004, Europhysics News, V35, P69, DOI 10.1051/epn:2004301

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