Reduction of infrared response of CdS/CdTe thin-film solar cell with decreased thickness of photovoltaic active layer

被引：15

作者：

Toyama, T ^{[1
]}

Suzuki, T ^{[1
]}

Gotoh, M ^{[1
]}

Nakamura, K ^{[1
]}

Okamoto, H ^{[1
]}

机构：

[1] Osaka Univ, Grad Sch Engn Sci, Dept Phys Sci, Toyonaka, Osaka 5608531, Japan

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2001年 / 67卷 / 1-4期

关键词：

CdTe; acceptor; depth profile; n-p junction; spectral response;

D O I：

10.1016/S0927-0248(00)00261-0

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Reduction of the infrared response is found in the CdS/CdTe thin-film solar cells with a decrease in the thicknesses of the photovoltaic active layers from 16 to 3 mum. The reduction is concluded to be mainly due to an increase in recombinations of photogenerated electrons in the p-layer caused by the unintentionally increased Cu acceptor concentration. A simple model for the depth profile of the donor and acceptor densities is proposed to explain that the acceptor concentration at the n-p junction can be unintentionally increased with a decrease in the thicknesses of the photovoltaic active layers, even if the process parameters for the Cu-doping are unchanged. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：41 / 47

页数：7

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