5-6.5 GHz LTCC power amplifier module with 0.3 W at 2.4 V in Si-bipolar

被引：8

作者：

Bakalski, W ^{[1
]}

Ilkov, N

Dernovsek, O

Matz, R

Simbürger, W

Weger, P

Scholtz, AL

机构：

[1] Vienna Univ Technol, Inst Commun & Radio Frequency Engn, Vienna, Austria

[2] Brandenburg Tech Univ Cottbus, Chair Circuit Design, Cottbus, Germany

来源：

ELECTRONICS LETTERS | 2003年 / 39卷 / 04期

关键词：

D O I：

10.1049/el:20030249

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A fully integrated 5.5 x 8.1 mm(2) low temperature cofired ceramic (LTCC) power amplifier module for 5-6.5 GHz has been realised in a 40 GHz-f(T)-BiCMOS technology. No external components are required. At 1 to 2.4 V supply voltages output powers of 17.5 to 24.8 dBm are achieved at 5.9 GHz. The respective power added efficiency is 28 to 36%. The small-signal gain is 23 dB.

引用

页码：375 / 376

页数：2

共 5 条

[1] Modeling of monolithic lumped planar transformers up to 20 GHz [J].

Kehrer, D ;

Simbürger, W ;

Wohlmuth, HD ;

Scholtz, AL .

PROCEEDINGS OF THE IEEE 2001 CUSTOM INTEGRATED CIRCUITS CONFERENCE, 2001, :401-404

[2]

Marchand N., 1944, ELECTRONICS, V17, P142

[3]

Piella G, 2002, PROCEEDINGS OF THE FIFTH INTERNATIONAL CONFERENCE ON INFORMATION FUSION, VOL II, P1557, DOI 10.1109/ICIF.2002.1021002

[4] A 2.4 GHz high efficiency SiGe HBT power amplifier with high-Q LTCC harmonic suppression filter [J].

Raghavan, A ;

Heo, D ;

Maeng, M ;

Sutono, A ;

Lim, K ;

Laskar, J .

2002 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-3, 2002, :1019-1022

[5]

ZHANG W, 2002, P 28 EUR SOL STAT CI, P215

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