Spatially resolved photoluminescence in GaAs surface acoustic wave structures

被引：56

作者：

Santos, PV ^{[1
]}

Ramsteiner, M ^{[1
]}

Jungnickel, F ^{[1
]}

机构：

[1] Paul Drude Inst Festkorperelekt, D-10117 Berlin, Germany

来源：

APPLIED PHYSICS LETTERS | 1998年 / 72卷 / 17期

关键词：

D O I：

10.1063/1.121288

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The interaction between a surface acoustic wave (SAW) and the excitonic photoluminescence (PL) in GaAs SAW structures is investigated. The dependence of the PL on the SAW amplitude and illumination intensity is explained by a simple model based on the field-induced ionization of the excitons and on the screening of the SAW electric field by photogenerated carriers, Microscopic PL constitutes a powerful technique for spatially resolving electric-field distributions in SAW structures. (C) 1998 American Institute of Physics.

引用

页码：2099 / 2101

页数：3

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