In-situ elevated-temperature TEM study of (AgSbTe2)15(GeTe)85

被引：40

作者：

Cook, Bruce A. ^{[1
]}

Wei, Xuezheng

Harringa, Joel L.

Kramer, Matthew J.

机构：

[1] Iowa State Univ, Ames Lab Mat, Ames, IA 50011 USA

[2] Iowa State Univ, Engn Phys Program, Ames, IA 50011 USA

来源：

JOURNAL OF MATERIALS SCIENCE | 2007年 / 42卷 / 18期

关键词：

D O I：

10.1007/s10853-007-1898-x

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

(AgSbTe2)(15)(GeTe)(85) (TAGS-85) is a p-type semiconductor characterized by a maximum dimensionless thermoelectric figure of merit of 1.4-1.7 at elevated temperature. In this study, the microstructure of as-solidified TAGS-85 at room temperature and elevated temperature (160 degrees C) was investigated using TEM. At room temperature, pervasive twinning was observed throughout the specimen. Upon heating to above 120 degrees C, some of the twins dissolved and new point defects began to nucleate. The mechanisms responsible for formation of high temperature defects are discussed.

引用

页码：7643 / 7646

页数：4

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[2]

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[3]

Chasmar R. P., 1959, J. Electron. Control, V7, P52, DOI DOI 10.1080/00207215908937186

[4] THERMOELECTRIC FIGURE OF MERIT OF SOME COMPOSITIONS IN THE SYSTEM (GETE)1-X[(AG2TE)1-Y(SB2TE3)Y]X [J].