Phonon-assisted exciton formation and relaxation in GaAs/AlxGa1-xAs quantum wells

被引：31

作者：

Gulia, M

Rossi, F

Molinari, E

Selbmann, PE

Lugli, P

机构：

[1] UNIV MODENA, DIPARTIMENTO FIS, I-41100 MODENA, ITALY

[2] ECOLE POLYTECH FED LAUSANNE, DEPT PHYS, CH-1015 LAUSANNE, SWITZERLAND

[3] UNIV ROMA TOR VERGATA, I-00133 ROME, ITALY

[4] INFM, I-00133 ROME, ITALY

来源：

PHYSICAL REVIEW B | 1997年 / 55卷 / 24期

关键词：

D O I：

10.1103/PhysRevB.55.R16049

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A microscopic analysis of exciton formation and relaxation in photoexcited quantum wells is presented. The theoretical approach is based on a Monte Carlo simulation of the coupled free-carrier and exciton dynamics, and includes various mechanisms contributing to exciton formation and relaxation. Our investigation clarifies the ori,ain of excitonic luminescence in time-resolved experiments. In particular, we address the problem of the relative efficiencies of exciton formation assisted by either LO phonons or acoustic phonons, respectively.

引用

页码：16049 / 16052

页数：4

共 15 条

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