Dielectric properties of hydrothermally epitaxied I-V perovskite thin films

被引：20

作者：

Tan, C. K. ^{[1
]}

Goh, G. K. L. ^{[1
]}

Cheah, W. L. ^{[1
]}

机构：

[1] Inst Mat Res & Engn, Singapore 117602, Singapore

来源：

THIN SOLID FILMS | 2007年 / 515卷 / 16期

关键词：

hydrothermal epitaxy; I-V perovskite; dielectric; oxygen plasma;

D O I：

10.1016/j.tsf.2006.11.109

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The dielectric properties of KTaO3 and KNbO3 I-V perovskite thin films grown by hydrothermal epitaxy on conducting SrTiO3 substrates are presented. As-grown films exhibited frequency dispersion of dielectric properties and high tangent losses associated with adsorption of hydroxyl groups and lattice proton incorporation respectively. Three post deposition treatments were investigated to improve the dielectric properties of the films. Thermal annealing at 600 degrees C and oxygen plasma treatment were effective in eliminating lattice hydroxyls and adsorbed groups. Ozone treatment improves dielectric loss only marginally. (C) 2007 Elsevier B.V. All rights reserved.

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收藏

页码：6577 / 6581

页数：5

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