Novel low k dielectrics based on diamondlike carbon materials

被引:60
作者
Grill, A [1 ]
Patel, V [1 ]
Jahnes, C [1 ]
机构
[1] IBM Corp, Div Res, TJ Watson Res Ctr, Yorktown Heights, NY 10598 USA
关键词
D O I
10.1149/1.1838531
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
Hydrogenated diamondlike carbon (DLC) and fluorine containing DLC (FDLC) were investigated for their potential applications as low Ic dielectrics for the back end of the line interconnect structures in ultralarge scale integrated circuits. It was found that the dielectric constant (k) of DLC can be varied between <2.7 and >3.4 by changing the deposition conditions. The thermal stability of the DLC films was found to be correlated to the values of the dielectric constant, decreasing with decreasing k. Only DLC films having dielectric constants k > 3.3 appeared to be stable to anneals of 4 h at 400 degrees C in a nonoxidizing environment. However these films were characterized by stresses higher then 600 MPa. FDLC films, thermally more stable at 400 degrees C than the DLC films with k > 3.3, could be prepared with dielectric constants below 2.7 and internal stresses <200 MPa. Such FDLC films are thus promising candidates as a low k interconnect dielectric.
引用
收藏
页码:1649 / 1653
页数:5
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