Formation and binding energies of vacancy clusters in silicon

被引：3

作者：

Colombo, L ^{[1
]}

Bongiorno, A ^{[1
]}

De la Rubia, TD ^{[1
]}

机构：

[1] INFM, I-20126 Milan, Italy

来源：

DEFECTS AND DIFFUSION IN SILICON PROCESSING | 1997年 / 469卷

关键词：

D O I：

10.1557/PROC-469-205

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We critically readdress the problem of vacancy clustering in silicon by perform large-scale tight-binding molecular dynamics simulations. We also compare the results of this quantum-mechanical approach to the widely used model-potential molecular dynamics scheme based on the Tersoff and Stillinger-Weber interatomic potentials.

引用

页码：205 / 210

页数：6