Shallow source drain extensions for pMOSFETs with high activation and low process damage fabricated by plasma doping

被引：27

作者：

Takase, M ^{[1
]}

Yamashita, K ^{[1
]}

Hori, A ^{[1
]}

Mizuno, B ^{[1
]}

机构：

[1] Matsushita Elect Ind Co Ltd, Cent Res Lab, Osaka 570, Japan

来源：

INTERNATIONAL ELECTRON DEVICES MEETING - 1997, TECHNICAL DIGEST | 1997年

关键词：

D O I：

10.1109/IEDM.1997.650427

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Low sheet resistance and extremely shallow profiles are achieved by plasma doping with low process damage and high activation efficiency. High performance pMOSFETs have been also fabricated by taking advantage of well-controlled plasma doped extensions. Linear transconductance (Gm) of the pMOSFET with plasma doped extensions is about 30% larger than that of 10 keV ion implanted device with same source/drain junction depth.

引用

页码：475 / 478

页数：4