Strain-induced enhancement of resonant current of holes in multilayered heterostructures

被引：23

作者：

Bittencourt, ACR ^{[1
]}

Cohen, AM

Marques, GE

机构：

[1] Univ Amazonas, Dept Fis, BR-67077000 Manaus, Amazonas, Brazil

[2] Univ Fed Sao Carlos, Dept Fis, BR-13565905 Sao Carlos, SP, Brazil

来源：

PHYSICAL REVIEW B | 1998年 / 57卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.57.4525

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We study the effects of axial strains and the admixture of resonant hole states on transmissivities and on partial and total currents of holes in multilayered structures. As an example, we have used strained GaxIn1-xAs-InP double barriers under external fields and show different aspects of the surfaces of energy and the nature of the solutions for different forms of internal strain built in the interfaces. We discuss possible optimal strain conditions on coherent tunneling probabilities and total currents that may enhance transport properties of each type of carrier. [S0163-1829(98)00308-7].

引用

页码：4525 / 4543

页数：19

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