Electron-beam irradiation of porous silicon: Application to micromachining

被引：12

作者：

Borini, S ^{[1
]}

Amato, G ^{[1
]}

Rocchia, M ^{[1
]}

Boarino, L ^{[1
]}

Rossi, AM ^{[1
]}

机构：

[1] Ist Elettrotecnico Nazl Galileo Ferraris, Quantum Res Lab, I-10135 Turin, Italy

来源：

JOURNAL OF APPLIED PHYSICS | 2003年 / 93卷 / 08期

关键词：

D O I：

10.1063/1.1560853

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Results on electron irradiation of porous silicon are presented and discussed. An electron-beam lithography system is used to irradiate small surface portions of porous silicon, without the use of any sensitive resists. In this way, it has been possible to write pattern with lateral resolution down to 120 nm. It is suggested that direct exposure to electron irradiation provokes the formation of defects, with an enhanced reactivity of exposed areas. This effect is suggested as a possible way to micro- and nanostructuring of porous silicon. (C) 2003 American Institute of Physics.

引用

页码：4439 / 4441

页数：3

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