Growth of columnar aluminum nitride layers on Si(111) by molecular beam epitaxy

被引：32

作者：

Karmann, S ^{[1
]}

Schenk, HPD ^{[1
]}

Kaiser, U ^{[1
]}

Fissel, A ^{[1
]}

Richter, W ^{[1
]}

机构：

[1] Univ Jena, Inst Festkorperphys, D-07743 Jena, Germany

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1997年 / 50卷 / 1-3期

关键词：

AlN; film; Si(111)-substrate; MBE; TEM;

D O I：

10.1016/S0921-5107(97)00168-2

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Single crystalline aluminum nitride (AlN) thin films are deposited by molecular bt am epitaxy (MBE) using thermally evaporated aluminum and RF-plasma excited nitrogen gas. In this paper we report on films grown on Si(111) at substrate temperatures of 800 degrees with growth rates between 65 and 350 nm h(-1). All layers consist of hexagonal and exactly c-axis oriented AlN crystals with column-like structure. For the smoothest layers surface roughness (rms) around 1 nm is obtained. In the XRD-spectra (omega-scan) we have achieved a minimum FWHM of 0.4 degrees (=25') for the AlN(00.2) reflex. At maximum growth rates (350 nm h(-1)) ibr AlN a transition zone of about 200 nm is formed with high defect density compared to the subsequent growth. For lower growth rates (65 nm h(-1)) no transition zone exists. Application of a substrate nitridation leads to a partial loss of epitaxial relation between AIN layer and Si(111)-substrate. (C) 1997 Elsevier Science S.A.

引用

页码：228 / 232

页数：5

共 18 条

[1] EFFECTS OF AIN BUFFER LAYER ON CRYSTALLOGRAPHIC STRUCTURE AND ON ELECTRICAL AND OPTICAL-PROPERTIES OF GAN AND GA1-XALXN(0-LESS-THAN-X-LESS-THAN-OR-EQUAL-TO-0.4) FILMS GROWN ON SAPPHIRE SUBSTRATE BY MOVPE [J].