共 17 条
Carbon nanotubes on SiC powder surface grown by a vacuum heating process
被引:17
作者:

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Miyano, R
论文数: 0 引用数: 0
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机构: Toyohashi Univ Technol, Dept Elect & Elect Engn, Tempa Ku, Aichi 441, Japan

Yatsuki, M
论文数: 0 引用数: 0
h-index: 0
机构: Toyohashi Univ Technol, Dept Elect & Elect Engn, Tempa Ku, Aichi 441, Japan

Sakakibara, T
论文数: 0 引用数: 0
h-index: 0
机构: Toyohashi Univ Technol, Dept Elect & Elect Engn, Tempa Ku, Aichi 441, Japan
机构:
[1] Toyohashi Univ Technol, Dept Elect & Elect Engn, Tempa Ku, Aichi 441, Japan
[2] Shizuoka Univ, Satellite Venture Business Lab, Shizuoka 432, Japan
来源:
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
|
1998年
/
37卷
/
2A期
关键词:
carbon nanotubes;
SiC powder;
sublimation;
vacuum heating;
W boat;
D O I:
10.1143/JJAP.37.L187
中图分类号:
O59 [应用物理学];
学科分类号:
摘要:
Silicon carbide (SiC) powders were baked on a resistively heated tungsten (W) boat at 1,600-1,700 degrees C for 10-15 min in vacuum. The surface morphology of the treated SiC powders was observed using a high resolution scanning electron microscope (HR-SEM). Carbon nanotubes were observed on the surface of 40% of SiC powder. The nanotubes were dense, but slightly dispersed and their growth direction was almost perpendicular to the original surface. The nanotubes on SiC were considerably shorter than that prepared by carbon are method, but significantly longer than that prepared by laser sublimation of SiC. Energy dispersive X-ray spectrometory (EDX) analysis suggested that W and O were doped on or in the vicinity of the powder surface.
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页码:L187 / L189
页数:3
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