Stress-induced voiding and its geometry dependency characterization

被引：32

作者：

Doong, KYY ^{[1
]}

Wang, RCJ ^{[1
]}

Lin, SC ^{[1
]}

Hung, LJ ^{[1
]}

Lee, SY ^{[1
]}

Chiu, CC ^{[1
]}

Su, D ^{[1
]}

Wu, K ^{[1
]}

Young, KL ^{[1
]}

Peng, YK ^{[1
]}

机构：

[1] Taiwan Semicond Mfg Corp, Hsinchu 300, Taiwan

来源：

41ST ANNUAL PROCEEDINGS: INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM | 2003年

关键词：

D O I：

10.1109/RELPHY.2003.1197737

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Stress induced voiding (SIV) is explored in the aspect of design attribute and geometry parameters. Two kinds of test structures were used to evaluate resistance change to the impact of reliability and understand SIV mechanism. Thus, a reliability-robustness guideline on the consideration of geometry configuration can be derived.

引用

页码：156 / 160

页数：5

共 12 条

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