Ferroelectric properties of Pb(Zi, Ti)O3 capacitor with thin SrRuO3 films within both electrodes

被引：71

作者：

Morimoto, T

Hidaka, O

Yamakawa, K

Arisumi, O

Kanaya, H

Iwamoto, T

Kumura, Y

Kunishima, I

Tanaka, S

机构：

[1] Semicond Co, Toshiba Corp, Microelect Engn Lab, Isogo Ku, Yokohama, Kanagawa 2358522, Japan

[2] Toshiba Corp, Corp Mfg Engn Ctr, Isogo Ku, Yokohama, Kanagawa 2350017, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2000年 / 39卷 / 4B期

关键词：

SRO; IrO2; PZT; FRAM; fatigue; imprint; reliability; oxidized electrode;

D O I：

10.1143/JJAP.39.2110

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Ferroelectric properties of a Pb(Zi, Ti)O-3 (PZT) capacitor with thin SrRuO3(SRO) films within both electrodes were investigated in detail. Thin SRO films of 10 nm thickness markedly improve the electrical performance, such as switching charge (Qsw), saturation characteristics of the hysteresis curve and imprint performance even at an elevated temperature. It should also be noted that there was no Qsw degradation after 5 x 10(10) read/write cycles at 5 V. No leakage current increase after the test was observed. The results of transmission electron microscope (TEM and electron dispersive X-ray (EDX) analyses also showed that there is no diffusion of either Sr or Ru in the PZT film. The Qsw increase can be explained by the model in which excess oxygen ions existing in the SRO films drift into the PZT due to the external electric field where they fill the oxygen vacancies in the PZT near the interfaces. We confirmed that the proposed electrode structure was a key to realizing highly reliable ferroelectric random access memories (FRAMs).

引用

页码：2110 / 2113

页数：4

共 5 条

[1]

CROSS JS, 1999, 11 INT S INT FERR CO, P1161

[2]

KANAI H, 1999, 11 INT S INT FERR CO, pC117

[3]

MIYAKAWA T, 1999, INT SOL STAT CIRC C

[4]

MORIMOTO T, 1999 INT C SOL STAT, P396

[5] PREPARATION OF PB(ZR,TI)O-3 THIN-FILMS ON IR AND IRO2 ELECTRODES [J].

NAKAMURA, T ;

NAKAO, Y ;

KAMISAWA, A ;

TAKASU, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (9B) :5207-5210

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