Memory effects of pentacene MFS-FET

The metal-ferroelectrics-semiconductor field effect transistor (MFS-FET) was fabricated on Si substrate by using semiconductive pentacene thin film and ferroelectrics lead titanate zirconate Pb(Zr,Ti)O-3 (PZT) thin film prepared by the sol-gel technique. The memory effects were estimated by the cyclic I-d-V-g characteristic measurements. MFS-FET with an intermediate insulator layer between the gate electrode and the PZT layer gave the clear square hysteresis loop. The shape of the hysteresis loop was much dependent on the preparation condition of the PZT thin film. The surface morphology of the PZT layer contributes to the difference of the shape of the hysteresis loop.