Polymers for 157 nm photoresist applications: A progress report

被引：60

作者：

Patterson, K ^{[1
]}

Yamachika, M ^{[1
]}

Hung, R ^{[1
]}

Brodsky, C ^{[1
]}

Yamada, S ^{[1
]}

Somervell, M ^{[1
]}

Osborn, B ^{[1
]}

Hall, D ^{[1
]}

Dukovic, G ^{[1
]}

Byers, J ^{[1
]}

Conley, W ^{[1
]}

Willson, CG ^{[1
]}

机构：

[1] Univ Texas, Dept Chem, Austin, TX 78712 USA

来源：

ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XVII, PTS 1 AND 2 | 2000年 / 3999卷

关键词：

D O I：

10.1117/12.388320

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Finding materials that offer the all of the characteristics required of photoresist matrix resin polymers while trying to maintain a high level of transparency at 157 nm is a daunting challenge. To simplify this task, we have broken the design of these polymers down into subunits, each of which is responsible for a required function in the final material. In addition, we have begun collecting gas-phase VUV spectra of these potential subunits to measure their individual absorbance contributions. Progress on developing materials for each of these subunits are presented along with plans for future studies.

引用

页码：365 / 374

页数：4

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